JPH0810213Y2 - 半導体レーザ装置 - Google Patents
半導体レーザ装置Info
- Publication number
- JPH0810213Y2 JPH0810213Y2 JP13270189U JP13270189U JPH0810213Y2 JP H0810213 Y2 JPH0810213 Y2 JP H0810213Y2 JP 13270189 U JP13270189 U JP 13270189U JP 13270189 U JP13270189 U JP 13270189U JP H0810213 Y2 JPH0810213 Y2 JP H0810213Y2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- heat sink
- laser array
- array
- receiving element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 57
- 208000024891 symptom Diseases 0.000 claims 1
- 238000000034 method Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13270189U JPH0810213Y2 (ja) | 1989-08-11 | 1989-11-15 | 半導体レーザ装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1-94554 | 1989-08-11 | ||
JP9455489 | 1989-08-11 | ||
JP13270189U JPH0810213Y2 (ja) | 1989-08-11 | 1989-11-15 | 半導体レーザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0377468U JPH0377468U (en]) | 1991-08-05 |
JPH0810213Y2 true JPH0810213Y2 (ja) | 1996-03-27 |
Family
ID=31890263
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13270189U Expired - Lifetime JPH0810213Y2 (ja) | 1989-08-11 | 1989-11-15 | 半導体レーザ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0810213Y2 (en]) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1041688A4 (en) * | 1997-12-15 | 2002-07-31 | Mitsubishi Electric Corp | Solid-state laser device excited by semiconductor lasers |
-
1989
- 1989-11-15 JP JP13270189U patent/JPH0810213Y2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0377468U (en]) | 1991-08-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5156999A (en) | Packaging method for semiconductor laser/detector devices | |
US6025213A (en) | Semiconductor light-emitting device package and method of manufacturing the same | |
JP2005150692A (ja) | 半導体レーザ装置 | |
JP2021163922A (ja) | 量子カスケードレーザ素子、量子カスケードレーザ装置及び量子カスケードレーザ装置の製造方法 | |
JPH0750813B2 (ja) | 半導体レーザ素子用サブマウント | |
JP4573882B2 (ja) | 半導体レーザ装置 | |
JPH0810213Y2 (ja) | 半導体レーザ装置 | |
CN101034791A (zh) | 具有集成光电二极管的激光器组件 | |
JP2004152845A (ja) | 半導体レーザ装置 | |
JPH05183239A (ja) | 半導体レーザ装置 | |
JP2000252592A (ja) | 光ディスク装置 | |
WO2021200582A1 (ja) | 量子カスケードレーザ素子の製造方法 | |
JPH08186327A (ja) | 半導体素子の封止構造 | |
JP2540298Y2 (ja) | マルチビーム半導体レーザ装置 | |
WO2021059752A1 (ja) | レーザ発光素子およびレーザ発光装置 | |
JP4704703B2 (ja) | アレイ型半導体レーザ装置 | |
JP2004047650A (ja) | レーザー装置 | |
JPS609189A (ja) | 半導体レ−ザ装置 | |
JP2005026333A (ja) | 半導体レーザ装置 | |
JP3186937B2 (ja) | 半導体発光素子 | |
JPH07193315A (ja) | 半導体レーザ装置およびその製造方法 | |
JP2006237156A (ja) | 光源装置及びその製造方法 | |
JP2766017B2 (ja) | 光素子および光電子装置 | |
JPS59169190A (ja) | 発光半導体装置 | |
JP2783806B2 (ja) | 光出力モニタ装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |